Technology of sub-100 nm InAlN/GaN HEMTs on silicon with suppressed leakage current

Due to the thin InAlN barrier layer, leakage current is a serious problem in InAlN/GaN high-electron-mobility transistors (HEMTs). The InGaN back-barrier can raise conduction band of GaN buffer layer and enhance carrier confinement, resulting reduced current. surface oxidation treatment prior gate deposition form an oxide reduce In this study, using both technologies, record low off (Ioff) high on/off (Ion/Ioff) ratio are achieved on HEMTs silicon substrate. HEMT with 70-nm rectangular presents Ioff 7.15 × 10−8 A/mm, Ion/Ioff 2.20 107, average subthreshold swing (SS) 69 mV/dec, drain-induced lowering (DIBL) 90 mV/V. T-shaped exhibits 3.26 4.5 SS 60 DIBL 30 To best our knowledge, these values among reported Si. RF measurements present that current/power gain cutoff frequency (fT/fmax) 215/45 GHz 130/160 gate, respectively.